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Carbon Nanotube Field-Effect-Transistors rope over the gap
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Single Wall Carbon Nanotube-Based Structural health Sensing Materials
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Controlled Deposition and Applied Field Alignment of Single Walled Carbon Nanotubes for CNT Device Fabrication
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Carbon Nanotube Field-Effect-Transistors

Features:

  • Development of a field-effect–transistor sensor of single-walled carbon nanotube by chemical vapor deposition

 

  • Device characterization of sensors for electrical and mechanical response

 

  • Laboratory comparison of CVD CNT FET Sensors with MEMS sensors for a mechanical response

nano transistor

Taking a Carbon NanoTube Device to a LaRC Tunnel
with MEMS Sensors

nano transistor 2

A SiO2/Si substrate with CNT (A) ropes is placed on an aluminum plug with the MEMS sensor cluster for test and comparison purposes. The aluminum plug with MEMS sensor cluster has been under test in 15” Low Turbulence Tunnel.

 

Publications:

  1. A.N. Watkins, J.L. Ingram, J.D. Jordan, R.A. Wincheski, J.M. Smits, and P.A. Williams, “Single Wall Carbon Nanotube-Based Structural health Sensing Materials,” presented at the 2004 NSTI Nanotechnology Conference and Trade Show, March 7-11, 2004, Boston, MA, and published in the proceedings.
  2. J. Smits, B. Wincheski, J. Ingram, N. Watkins, and J. Jordan, “Controlled Deposition and Applied Field Alignment of Single Walled Carbon Nanotubes for CNT Device Fabrication,” Materials Research Society Symposium Proceedings, Vol. 739 (2003), H7.11.1

 

   
 
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